%0 Journal Article
%4 dpi.inpe.br/plutao/2012/11.28.01.07
%2 dpi.inpe.br/plutao/2012/11.28.01.07.44
%@doi 10.4028/www.scientific.net/MSF.727-728.1433
%@issn 0255-5476
%F lattes: 5450987692265022 2 CamposCoTrMoBaCo:2012:CVDiFi
%T CVD Diamond Films Growth on Silicon Nitride Inserts (Si<sub>3</sub>N<sub>4</sub>) with High Nucleation Density by Functionalization Seeding
%D 2012
%A Campos, Raonei Alves,
%A Contin, Andre,
%A Trava-Airoldi, Vladimir J.,
%A Moro, J. R.,
%A Barquete, D. M.,
%A Corat, Evaldo J.,
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation IFSP, Instituto Federal de Educação, Ciência e Tecnologia de São Paulo, CEP 12929-600 Bragança Paulista, SP, Brazil
%@affiliation UESC, Universidade Estadual de Santa Cruz, Rodovia Ilhéus-Itabuna, CEP 45662-900, Ilhéus, BA, Brazil
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@electronicmailaddress campos@las.inpe.br
%@electronicmailaddress andrecontin@yahoo.com.br
%B Materials Science Forum. Advanced Powder Technology VIII Book Series
%V 727-728
%P 1433-1438
%K CVD diamond, HFCVD, Silicon nitride (Si 3N 4).
%X Silicon Nitride is largely used as the base material to manufacture cutting tools. Due to its low thermal expansion coefficient it is ideal candidate for CVD diamond deposition. In this work, we functionalized the surface of silicon nitride inserts (Si 3N 4) with a polymer (PDDA - Poly (diallyldimethylamonium chloride - Mw 40000)) to promote seeding with nanodiamond particles. The seeding was performed in water slurry containing 4 nm diamond particles dispersed by PSS - Poly (sodium4-styrenesulfonate) polymer. CVD diamond films, with high nucleation density, were deposited in a hot filament reactor. Film morphology was characterized by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Diamond film quality was determined by Raman Spectroscopy. CVD diamond film adherence was evaluated using Rockwell C indentation.
%@language pt